¡¡¸ð°£Àº Sintered silicon carbide, reaction-bonded silicon carbide, sintered silicon carbide µî ¸Å¿ì ´Ù¾çÇÑ silicon carbide Á¦Ç°À» PurebideTM ¶õ À̸§À¸·Î °ø±ÞÇϰí ÀÖ½À´Ï´Ù.

 

Siliconized Graphite
Reaction bonded silicon carbide
Self sintered silicon carbide
PE-8148
PE-7130
Purebide¢â R
Purebide¢â G
PGS100
PGS200
PGS5000
Apparent Density, gm/cm3
2
1.85
3.08
2.8
2.9
2.65
3.1
Hardness, Vickers
2,000
2,000
2,400
2,000
2,200
2,000
3,000
Compressive Strength, psi
40,000
12,000
400,000
80,000
100,000
70,000
550,000
Modulus of Elasticity, psi
10¡¿10
2¡¿10
50¡¿10
22¡¿10
30¡¿10
18¡¿10
60¡¿10
Flexural Strength, psi
20,000
15,000
65,000
Temperature Limit, Oxidizing Atmosphere (¡ÆF)
850
850
2,500
1,000
1,000
1,000
3,000
Temperature Limit When Resin Impregnated (¡ÆF)
450
30
Coefficient of Thermal Conductivity,
BTU/hr.ft.2 - ¡ÆF/ft. (at 75¡ÆF)
30
3.2
85
90
90
75
87
Coefficient of Thermal Expansion,
¥ì - in./in ¡ÆF (70 to 500¡ÆF)
3.2
2.5
2.3
2.2
2.3
2

 

¡¡Ç×°ø±â¿Í °°ÀÌ ³ôÀº ¼Óµµ¿¡¼­ ¸Å¿ì ³ôÀº ¸¶Âû°ú ¿Âµµ°¡ ¹ß»ýµÇ´Â ºÐ¾ß¿¡, Purebide¢â R, Purbide¢â G ÀçÁúÀÌ ¸Å¿ì ÀûÇÕ ÇÕ´Ï´Ù.

Reaction Bonded SiC (SiSiC)
Reaction Bonded SiC with Graphite (SiSiC-C)

 

¡¡³ôÀº ¾Ð·Â°ú ¿Âµµ, ºÎ½Ä°ú ¸¶ÂûÀÌ ¸Å¿ì ³ôÀº È­ÇÐÀû ȯ°æ¿¡¼­´Â Purebide¢â GS, PGS-100, Purebide¢â GS, PGS-200 µî self sintered silicon carbide °¡ ¸Å¿ì ÁÁ½À´Ï´Ù.

Sintered Silicon Carbide with
Graphite and Porosity (SSiCC)
Sintered Silicon Carbide with Graphite
Sintered SiC with porosity (SSiC)

 

* CVR ¹æ½Ä¿¡ ÀÇÇØ »ý»êµÇ´Â siliconized graphite ´Â Ç¥¸é¿¡ Á¸ÀçÇÏ´Â graphite ¹°Áú°ú ÇÔ²² »ç¿ëµÇ´Â À¯Ã¼°¡ ¼ÒÀçÀÇ ±â°ø ¼Ó¿¡¼­ À±È°À¯ ¿ªÇÒÀ» ÇÏ¿©, À±È°¼ºÀÌ ÁÁÀº °ÍÀÌ Æ¯Â¡ÀÔ´Ï´Ù.

* ÀÌ ¼ÒÀç´Â ¾Á(seal) ¿ëµµ·Î »ç¿ë °æ¿ì, ¿ëµµ¿¡ µû¶ó¼­ °¢Á¾ ·¹ÁøÀ̳ª ¸ÞÅ»À» ÇÔħÇÏ¿© »ç¿ëÇÒ ¼öµµ ÀÖ½À´Ï´Ù.

 

Counterface
Maximum pressure(Bar)
PV (Bar.m/s)
PV (kpsi.ft/min)
PGS-100
100
1,800
5,140
PR-2000
40
720
2,050
WC
50
900
2,570
Sintered SiC
30
540
1,540